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NCS603DTBR2G manufacturer
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NCS603DTBR2G – integrated circuits

NCS603DTBR2G is an integrated circuit manufactured by ON Semiconductor. It is a dual N-channel enhancement-mode power MOSFET designed for use in high-current switching applications. It is a low-voltage, low-RDS(on) device with a breakdown voltage of 60V and a maximum drain-source voltage of 30V. It has a maximum drain current of 6A and a maximum continuous drain current of 3A. It is available in a TO-220 package and is lead-free and RoHS-compliant.